Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Packaging | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current – Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Vgs (Max) | +10V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V |
| FET Feature | – |
| Power Dissipation (Max) | 840mW (Ta), 100W (Tc) |
| Operating Temperature | 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance-WF (3.1×3.1) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | XPN9R614 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.