Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current – Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 6.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
| FET Feature | – |
| Power Dissipation (Max) | 182W (Tc) |
| Operating Temperature | 175°C |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L(X) |
| Package / Case | TO-247-4 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.