Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current – Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | TK9J90 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.