Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current – Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 50 V |
| FET Feature | – |
| Power Dissipation (Max) | 255W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | TK100E10 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.