Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Packaging | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current – Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 20 V |
| FET Feature | – |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | 150°C |
| Grade | – |
| Qualification | – |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-UDFNB (2×2) |
| Package / Case | 6-WDFN Exposed Pad |
| Base Product Number | SSM6K514 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.