Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current – Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 134mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V |
| Vgs (Max) | +10V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 10 V |
| FET Feature | – |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23F |
| Package / Case | SOT-23-3 Flat Leads |
Değerlendirmeler
Henüz değerlendirme yapılmadı.