Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Packaging | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current – Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| FET Feature | – |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C |
| Grade | – |
| Qualification | – |
| Mounting Type | Surface Mount |
| Supplier Device Package | UFM |
| Package / Case | 3-SMD, Flat Leads |
| Base Product Number | SSM3J135 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.