Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Manufacturer | Rohm Semiconductor |
| Series | – |
| Packaging | Tray |
| Part Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | – |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current – Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Rds On (Max) @ Id, Vgs | – |
| Vgs(th) (Max) @ Id | 4V @ 68mA |
| Gate Charge (Qg) (Max) @ Vgs | – |
| Input Capacitance (Ciss) (Max) @ Vds | 35000pF @ 10V |
| Power – Max | 1875W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Base Product Number | BSM300 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.