Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Renesas Electronics Corporation |
| Series | SuperGaN® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current – Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4.7V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 638 pF @ 400 V |
| FET Feature | – |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.