Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Quest Semi |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current – Continuous Drain (Id) @ 25°C | 36A |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3.8V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 600 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1001 pF @ 800 V |
| Power Dissipation (Max) | 198W |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.