Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Manufacturer | onsemi |
| Series | – |
| Packaging | Tray |
| Part Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | – |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current – Continuous Drain (Id) @ 25°C | 435A (Tj) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 200A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 160mA |
| Gate Charge (Qg) (Max) @ Vgs | 1200nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 20889pF @ 800V |
| Power – Max | 1.48kW (Tj) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 36-PIM (56.7×62.8) |
| Base Product Number | NXH003 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.