Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Manufacturer | onsemi |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | – |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current – Continuous Drain (Id) @ 25°C | 400A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 400A, 20V |
| Vgs(th) (Max) @ Id | 3.2V @ 150mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.75µC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 31700pF @ 800V |
| Power – Max | 1kW (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 15-PowerDIP Module (2.441″, 62.00mm) |
| Supplier Device Package | AHPM15-CDE |
Değerlendirmeler
Henüz değerlendirme yapılmadı.