Açıklama

ÖZELLİK	AÇIKLAMA
Mfr	onsemi
Series	–
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900 V
Current – Continuous Drain (Id) @ 25°C	118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	196 nC @ 15 V
Vgs (Max)	+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds	4415 pF @ 450 V
FET Feature	–
Power Dissipation (Max)	503W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	–
Qualification	–
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	NTHL020