Açıklama

ÖZELLİK	AÇIKLAMA
Mfr	onsemi
Series	–
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current – Continuous Drain (Id) @ 25°C	81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	40mOhm @ 60A, 20V
Vgs(th) (Max) @ Id	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	4230 pF @ 800 V
FET Feature	–
Power Dissipation (Max)	535W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	–
Qualification	–
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
Base Product Number	NTH4L02