Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | GeneSiC Semiconductor |
| Series | SiC Schottky MPS™ |
| Packaging | Tube |
| Part Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage – DC Reverse (Vr) (Max) | 650 V |
| Current – Average Rectified (Io) | 82A |
| Voltage – Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current – Reverse Leakage @ Vr | 10 µA @ 650 V |
| Capacitance @ Vr, F | 1463pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Operating Temperature – Junction | -55°C ~ 175°C |
| Base Product Number | GD60 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.