Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | GeneSiC Semiconductor |
| Series | SiC Schottky MPS™ |
| Packaging | Tube |
| Part Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage – DC Reverse (Vr) (Max) | 1200 V |
| Current – Average Rectified (Io) | 55A |
| Voltage – Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Speed | Fast Recovery = 200mA (Io) |
| Current – Reverse Leakage @ Vr | 20 µA @ 1200 V |
| Capacitance @ Vr, F | 1101pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Operating Temperature – Junction | -55°C ~ 175°C |
Değerlendirmeler
Henüz değerlendirme yapılmadı.