Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Manufacturer | GeneSiC Semiconductor |
| Series | SiC Schottky MPS™ |
| Packaging | Tube |
| Part Status | Active |
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage – DC Reverse (Vr) (Max) | 650 V |
| Current – Average Rectified (Io) (per Diode) | 150A (DC) |
| Voltage – Forward (Vf) (Max) @ If | 1.8 V @ 150 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current – Reverse Leakage @ Vr | 10 µA @ 650 V |
| Operating Temperature – Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Base Product Number | GD2X |
Değerlendirmeler
Henüz değerlendirme yapılmadı.