Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ H2 |
| Packaging | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current – Continuous Drain (Id) @ 25°C | 27A |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 2.2A, 12V |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 12 V |
| Vgs (Max) | +20V, -1V |
| FET Feature | – |
| Power Dissipation (Max) | – |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Surface Mount |
| Supplier Device Package | 16-DFN (8×8) |
| Package / Case | 16-PowerVDFN |
Değerlendirmeler
Henüz değerlendirme yapılmadı.