Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | – |
| Voltage – Collector Emitter Breakdown (Max) | 1200 V |
| Current – Collector (Ic) (Max) | 40 A |
| Current – Collector Pulsed (Icm) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Power – Max | 230 W |
| Switching Energy | -, 290µJ (off) |
| Input Type | Standard |
| Td (on/off) @ 25°C | – |
| Test Condition | 280V, 40A, 10Ohm, 20V |
| Reverse Recovery Time (trr) | 600 ns |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Base Product Number | GT40QR21 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.