Açıklama

ÖZELLİK	AÇIKLAMA
Mfr	STMicroelectronics
Series	–
Packaging	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current – Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 400 V
FET Feature	–
Power Dissipation (Max)	270W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	–
Qualification	–
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCT30