Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Renesas Electronics Corporation |
| Series | SuperGaN™ |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current – Continuous Drain (Id) @ 25°C | 46.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 0 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| FET Feature | – |
| Power Dissipation (Max) | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | TP65H035 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.