Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current – Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 30 V |
| FET Feature | – |
| Power Dissipation (Max) | 168W (Tc) |
| Operating Temperature | 175°C |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | TK3R2E06 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.