Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Mfr | ANBON SEMICONDUCTOR (INT’L) LIMITED |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current – Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 1000 V |
| FET Feature | – |
| Power Dissipation (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | – |
| Qualification | – |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.