Açıklama
| ÖZELLİK | AÇIKLAMA |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | – |
| Packaging | Tube |
| Part Status | Active |
| IGBT Type | – |
| Voltage – Collector Emitter Breakdown (Max) | 600 V |
| Current – Collector (Ic) (Max) | 30 A |
| Current – Collector Pulsed (Icm) | 60 A |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 30A |
| Power – Max | 170 W |
| Switching Energy | 1mJ (on), 800µJ (off) |
| Input Type | Standard |
| Td (on/off) @ 25°C | 90ns/300ns |
| Test Condition | 300V, 30A, 24Ohm, 15V |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Base Product Number | GT30J121 |
Değerlendirmeler
Henüz değerlendirme yapılmadı.